engleski

Characteristic Transient Response Shapes of a-Si:H Three-Colour Detectors

Transients and relevant response times of a-Si:H p-i-n three-colour detectors under simultaneously pulsed visibe light illumination and various bias voltage conditions were studied. The one or two processes, correspondig to transition and trapping, are found to be involved in the conduction mechanism. The characteristic transient response shapes are found for parameters as voltage pulse amplitude. The results can be used in future development of colour sensor ; in determination of the defects density of states and as an active pixel sensor for various industrial and other applications.

transient response; colour detector; a-Si:H; response times

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