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Pregled bibliografske jedinice broj: 36606

Quantitative analysis of a-Si_1-xC_x:H thin films


Gracin, Davor; Jakšić, Milko; Yang, C.; Borjanović, Vesna; Praček, Borut
Quantitative analysis of a-Si_1-xC_x:H thin films // Applied surface science, 145 (1999), 188-191 doi:10.1016/S0169-4332(98)00795-8 (međunarodna recenzija, članak, znanstveni)


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Naslov
Quantitative analysis of a-Si_1-xC_x:H thin films

Autori
Gracin, Davor ; Jakšić, Milko ; Yang, C. ; Borjanović, Vesna ; Praček, Borut

Izvornik
Applied surface science (0169-4332) 145 (1999); 188-191

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
a-Si_1-xC_x:H thin films

Sažetak
The composition of a-Si_1-xC_x:H films, deposited by magnetron sputtering, was measured by AES (Auger Electron Spectrometry), RBS (Rutherford Backscattering Spectrometry) using both, protons and alpha particles, ERDA (Elastic Recoil Detection Analysis) and FTIR spectrometry. The results obtained by all three methods show agreement in C_c/C_Si ratio within the experimental error. However, the AES somewhat underestimates the silicon concentrations, which is discussed as a consequence of chemical bonding and matrix effects. The hydrogen concentrations obtained by ERDA are typically about 30% higher than those estimated by FTIR, possibly due to the presence of non-bonded hydrogen in the film.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekti:
00980302
00980206

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb,
Institut "Ruđer Bošković", Zagreb

Profili:

Avatar Url Milko Jakšić (autor)

Avatar Url Vesna Borjanović (autor)

Avatar Url Davor Gracin (autor)

Citiraj ovu publikaciju

Gracin, Davor; Jakšić, Milko; Yang, C.; Borjanović, Vesna; Praček, Borut
Quantitative analysis of a-Si_1-xC_x:H thin films // Applied surface science, 145 (1999), 188-191 doi:10.1016/S0169-4332(98)00795-8 (međunarodna recenzija, članak, znanstveni)
Gracin, D., Jakšić, M., Yang, C., Borjanović, V. & Praček, B. (1999) Quantitative analysis of a-Si_1-xC_x:H thin films. Applied surface science, 145, 188-191 doi:10.1016/S0169-4332(98)00795-8.
@article{article, year = {1999}, pages = {188-191}, DOI = {10.1016/S0169-4332(98)00795-8}, keywords = {a-Si\_1-xC\_x:H thin films}, journal = {Applied surface science}, doi = {10.1016/S0169-4332(98)00795-8}, volume = {145}, issn = {0169-4332}, title = {Quantitative analysis of a-Si\_1-xC\_x:H thin films}, keyword = {a-Si\_1-xC\_x:H thin films} }
@article{article, year = {1999}, pages = {188-191}, DOI = {10.1016/S0169-4332(98)00795-8}, keywords = {a-Si\_1-xC\_x:H thin films}, journal = {Applied surface science}, doi = {10.1016/S0169-4332(98)00795-8}, volume = {145}, issn = {0169-4332}, title = {Quantitative analysis of a-Si\_1-xC\_x:H thin films}, keyword = {a-Si\_1-xC\_x:H thin films} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


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