engleski

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by gamma Irradiation and High Temperature-High Pressure Treatment

Effect of processing under high hydrostatic pressure (= 1.1 GPa), applied at 1270 K, on Czochralski grown silicon with interstitial oxygen content (cO) up to 1:1x10E18 cm-3, admixed with N or Ge (Si-N, cN <1.2x10E15 cm-3, or Si-Ge, cGe ~ 7x10E17 cm-3, respectively), pre-annealed at up to 1400 K and next irradiated with gamma-rays (dose, D up to 2530 Mrad, at energy E = 1.2 MeV), was investigated by high resolution X-ray diffrac- tion, Fourier transform infrared spectroscopy, and synchrotron topography. Processing of gamma-irradiated Si-N and Si-Ge under high pressure leads to stimulated precipitation of oxygen at the nucleation sites created by irradiation. It means that radiation history of Si-N and Si-Ge can be revealed by appropriate high temperature-high pressure processing.

silicon ; germanium ; nitrogen ; defects ; X-ray diffraction

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