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Low pressure chemical vapor deposition of thin SiOx films by chemical reaction of SiH4, O2 and N2: gaseous: preparation and characterization


Vilman, Viktor; Ivanda, Mile; Biljanović, Petar; Gamulin, Ozren; Ristić, Davor; Furić, Krešimir; Ristić, Mira; Musić, Svetozar
Low pressure chemical vapor deposition of thin SiOx films by chemical reaction of SiH4, O2 and N2: gaseous: preparation and characterization // Proceedings of MIPRO 2008 / Biljanović, Petar ; Skala, Karolj (ur.).
Rijeka: Denona, 2008. str. 35-37 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)


Naslov
Low pressure chemical vapor deposition of thin SiOx films by chemical reaction of SiH4, O2 and N2: gaseous: preparation and characterization

Autori
Vilman, Viktor ; Ivanda, Mile ; Biljanović, Petar ; Gamulin, Ozren ; Ristić, Davor ; Furić, Krešimir ; Ristić, Mira ; Musić, Svetozar

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of MIPRO 2008 / Biljanović, Petar ; Skala, Karolj - Rijeka : Denona, 2008, 35-37

ISBN
978-953-233-036-6

Skup
31th International Convention, MIPRO 2008

Mjesto i datum
Opatija, Hrvatska, 26-30.05.2008

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
LPCVD; SiOx films; stechiomety coefficient; IR and Raman spcetroscopy

Sažetak
The silicon rich silicon oxide (SiOx) thin films were prepared in LPCVD reactor, by thermal oxidation of silane in oxygen-nitrous oxide atmosphere. The stoichiometry coefficient x was controlled by the substrate temperature ant the ration of the partial pressures of silane and oxidants O2 and N2O. The structural and optical properties of prepared SiOx films were analyzed by infrared and Raman spectroscopy and scanning electron microscopy. The reaction of silane with oxygen ant nitrous oxide results in higher deposition rates of SiOx film when compared to the cases of silane/oxygen reaction of silane/nitrous oxide reaction. The surface properties of obtained films exhibit good g+homogeneity as well as superior quality when compared to the reaction with nitrous oxide, only.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Elektrotehnika



POVEZANOST RADA


Projekt / tema
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Marko Koričić, )
098-0982904-2898 - Fizika i primjena nanostruktura i volumne tvari (Mile Ivanda, )

Ustanove
Fakultet elektrotehnike i računarstva, Zagreb,
Institut "Ruđer Bošković", Zagreb