engleski

Low pressure chemical vapor deposition of thin SiOx films by chemical reaction of SiH4, O2 and N2: gaseous: preparation and characterization

The silicon rich silicon oxide (SiOx) thin films were prepared in LPCVD reactor, by thermal oxidation of silane in oxygen-nitrous oxide atmosphere. The stoichiometry coefficient x was controlled by the substrate temperature ant the ration of the partial pressures of silane and oxidants O2 and N2O. The structural and optical properties of prepared SiOx films were analyzed by infrared and Raman spectroscopy and scanning electron microscopy. The reaction of silane with oxygen ant nitrous oxide results in higher deposition rates of SiOx film when compared to the cases of silane/oxygen reaction of silane/nitrous oxide reaction. The surface properties of obtained films exhibit good g+homogeneity as well as superior quality when compared to the reaction with nitrous oxide, only.

LPCVD; SiOx films; stechiomety coefficient; IR and Raman spcetroscopy

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