engleski

FinFET technology for wide-channel devices with ultra-thin silicon body

Crystallographic silicon etching with TMAH is employed on (110) bulk silicon wafers for the etching of silicon fins with ultra-high aspect-ratio. Thin silicon-nitride spacers are used as the hard-mask and the etched fins are isolated from the substrate by the thick oxide layer. Silicon dioxide and n+-polysilicon form the gate-stack of the FinFETs. The height of the etched fins exceeds 1 μ m and the height of the active region is between 300 nm and 600 nm. From the SEM analysis, the width of the fins is estimated in the range of 10 nm, giving the record-high aspect-ratio of the fin geometry. Both n- and p-channel devices are demonstrated and show low leakage and good subthreshold performance. Common to all devices with thin, fully-depleted body with the polysilicon gate, the threshold voltages require special adjustment to make them suitable for CMOS operation and the high-k/metal gate-stack with the possibility of work-function engineering is the optimum solution for the further investigation of these devices.

CMOS; FinFET; wide-channel; ultra-thin body; tall fin; TMAH

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