engleski

Radiation defects in carbon rich poly-Si

Intrinsic point defect population in polycrystalline silicon is of the particular importance due to its influence on the electronic properties of material. A study of intrinsic point defects behavior is additionally complicated due to the interaction with the present impurities and different structural defects. Experiments were performed on EFG polycrystalline silicon material rich with carbon and different structural defects such as dislocations and various grain boundaries. Samples were irradiated with 1.2 MeV gamma rays from 60Co source to various doses to introduce simple point defects into the bulk of the material. For the comparison samples have also been irradiated with 2-4 MeV protons to various doses. The proton irradiation is known to produce more complex defects than just point-like defects. Although such material typically exhibits great spatial inhomogeneity we have ensured reproducibility of our measurements. The results obtained with deep-level transient spectroscopy showed the great difference in two types of radiation. Comparing the similar effect on CZ single-crystal Si samples the clear effect of carbon is shown and discussed.

defects; polycrystalline silicion; DLTS

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