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Low pressure chemical vapour deposition of heavily boron doped polycrystalline silicon thin films: preparation and characterizations


Žonja, Sanja; Ivanda, Mile; Očko, Miroslav; Biljanović, Petar; Furić, Krešimir
Low pressure chemical vapour deposition of heavily boron doped polycrystalline silicon thin films: preparation and characterizations // Proceedings of MIPRO 2008 / Biljanović, Petar ; Skala, Karolj (ur.).
Rijeka: Denona, 2008. str. 38-42 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)


Naslov
Low pressure chemical vapour deposition of heavily boron doped polycrystalline silicon thin films: preparation and characterizations

Autori
Žonja, Sanja ; Ivanda, Mile ; Očko, Miroslav ; Biljanović, Petar ; Furić, Krešimir

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of MIPRO 2008 / Biljanović, Petar ; Skala, Karolj - Rijeka : Denona, 2008, 38-42

ISBN
978-953-233-036-6

Skup
31th International Convention, MIPRO 2008

Mjesto i datum
Opatija, Hrvatska, 26-30.05.2008

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Polysilicon; LPCVD; boron concentration; sheet resistance; Raman spectroscopy;

Sažetak
Heavily boron - doped polycrystalline silicon samples were prepared by horizontal low pressure chemical vapour deposition (LPCVD) at 750 °C. The as-deposited samples were thermally annealed at 1200 °C in diffusion furnace filled with water vapour and, thereafter, HF etched. The sheet resistance was determined by four point probe method. The low temperature resistivity measurements were made from room temperature down to 2K. The observed resistivity drop at the lowest temperatures was discussed within Altshuler’ s theory for the two dimensional disordered metals conduction models. The Fano-type interference on transversal optical (TO) vibrational modes was observed in the Raman spectra. The boron concentration embedded in bulk silicon grains was estimated from the asymmetry and the shift of the TO phonon mode.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Elektrotehnika



POVEZANOST RADA


Projekt / tema
035-0352827-2841 - Materijali sa elektronskom strukturom modeliranom modernim tehnikama priprave (Ivica Aviani, )
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Marko Koričić, )
098-0982904-2898 - Fizika i primjena nanostruktura i volumne tvari (Mile Ivanda, )

Ustanove
Institut za fiziku, Zagreb,
Fakultet elektrotehnike i računarstva, Zagreb,
Institut "Ruđer Bošković", Zagreb