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Low temperature resistivity of heavily boron doped LPCVD polysilicon thin films

Heavily boron delta-doped polysilicon samples were prepared by horizontal low-pressure chemical vapor deposition (LPCDV) at 750◦ C for 1h and were annealed at 1200◦ C for 1h. In this way, the samples with low sheet resistance down to 8.9Ω /sq were obtained. The resistivity was measured from room temperature down to 2K. A T1/2 dependence of the conductivity in an unusually wide temperature interval, even up to 80K was observed. Above 140K, the resistivity can be described by the T3/2 dependence. The experimental results were analyzed within the theories for the disordered metals and compared with the corresponding existing resistivity data.

low temperature resistivity ; heavily boron doped polycrystalline silicon thin films

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