engleski

Characterisation of molecular nitrogen in III-V compound semiconductors by near-edge X-ray absorption fine structure and photoemission spectroscopies

Formation of molecular nitrogen under low-energy nitrogen bombardment of III-V compound semiconductor surfaces has been studied by photoemission spectroscopy around N 1s core- level and near-edge X-ray absorption fine structure (NEXAFS) around N K-edge. Interstitial molecular nitrogen, N2, has been formed in all samples under consideration. The presence of N2 produces a sharp resonance in low-resolution NEXAFS spectra, showing the characteristic vibrational fine structure in high- resolution measurements, and, at the same time, a new peak, shifted towards higher binding energies for several eV, in all N 1s photoemission spectra.

NEXAFS; nitrogen defects; core-level photoemission; ion-beam nitridation; thin-films; gan; surfaces; implantation; bombardment; defects; growth

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