Characterisation of molecular nitrogen in III-V compound semiconductors by near-edge X-ray absorption fine structure and photoemission spectroscopies (CROSBI ID 140557)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Božanić, Ana ; Majlinger, Zlatko ; Petravić, Mladen ; Gao, Q. ; Llewellyn, D. ; Crotti, C. ; Yang, Y.-W.
engleski
Characterisation of molecular nitrogen in III-V compound semiconductors by near-edge X-ray absorption fine structure and photoemission spectroscopies
Formation of molecular nitrogen under low-energy nitrogen bombardment of III-V compound semiconductor surfaces has been studied by photoemission spectroscopy around N 1s core- level and near-edge X-ray absorption fine structure (NEXAFS) around N K-edge. Interstitial molecular nitrogen, N2, has been formed in all samples under consideration. The presence of N2 produces a sharp resonance in low-resolution NEXAFS spectra, showing the characteristic vibrational fine structure in high- resolution measurements, and, at the same time, a new peak, shifted towards higher binding energies for several eV, in all N 1s photoemission spectra.
NEXAFS; nitrogen defects; core-level photoemission; ion-beam nitridation; thin-films; gan; surfaces; implantation; bombardment; defects; growth
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Podaci o izdanju
26 (4)
2008.
592-596
objavljeno
1071-1023