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Electrons and Holes Lifetimes as Function of Deep Energy Level Position

The most important parameters of semiconductor devices depend on electrons" and holes" lifetimes. Recombinations centers are introduced into semiconductors with the purpose to influence the lifetimes. These centers introduced energy levels into semiconductor's band gap. Usually, one of them is dominant. The influence of the position of such deep energy level and the Fermi level on the lifetime is considered and presented in this work. Measurement is made on an p"pnn" structure into which various deep trap were added its' deep energy lays over or under the Fermi level. Measured and calculated holes" lifetime as a function of the injection level is presented.

lifetime; recombination; deep energy level

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