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Recombination at heterojunctions in disordered organic media: Modeling and numerical simulations (CROSBI ID 138031)

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Jurić, Ivan ; Batistić, Ivo ; Tutiš, Eduard Recombination at heterojunctions in disordered organic media: Modeling and numerical simulations // Physical review. B, Condensed matter and materials physics, 77 (2008), 165304-1-165304-13. doi: 10.1103/PhysRevB.77.165304

Podaci o odgovornosti

Jurić, Ivan ; Batistić, Ivo ; Tutiš, Eduard

engleski

Recombination at heterojunctions in disordered organic media: Modeling and numerical simulations

Multilayer organic electroluminescent devices derive their advantages over their single-layer counterparts from the processes occurring at heterojunctions in organic media. These processes significantly differ from those in the bulk of the material. This paper presents three-dimensional modeling, numerical simulations, and a discussion of transport and recombination in a system with a heterojunction. We consider partial cross sections for the creation of excitons and exciplexes, and probabilities for recombination in the respective channels. We examine the influence of the energy barrier, electric field, site-energy disorder, and structural disorder at an organic-organic interface on transport and recombination. In particular, we investigate optimal parameter domains for recombination in the exciton channel. The interface roughness, unlike the site-energy disorder, is found to strongly affect the partial cross sections.

electroluminescent devices; electron-hole recombination; excitons; interface phenomena; interface roughness; organic light emitting diodes

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Podaci o izdanju

77

2008.

165304-1-165304-13

objavljeno

1098-0121

10.1103/PhysRevB.77.165304

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Fizika

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