engleski

Method of growing of p-type GaN in nonequilibrium conditions

At present it is impossible to produce p-type GaN as the lattice `self-compensates' by producing a negatively charged vacancy for each acceptor impurity atom introduced. The authors suggest that doping with a radioactive neutral impurity that subsequently decays into an acceptor species might result in a p-type sample that is stable thereafter (8 References).

radioactive neutral impurity; p-GaN; growth in nonequilibrium conditions; decaying to acceptor species; III-V semiconductors

nije evidentirano