Morphology of the implantation-induced disorder in GaAs (CROSBI ID 135767)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Desnica, Uroš V. ; Desnica, Ida Dunja ; Ivanda, Mile ; Haynes, T. E.
engleski
Morphology of the implantation-induced disorder in GaAs
Disorder is introduced into GaAs by implantation oi Si-30(+) ions, using a very wide range of ion doses, and studied by Raman scattering (RS) and Rutherford backscattering and ion channeling (RES). A comparative analysis of mechanisms influencing RS and RES signals has been made. This analysis revealed that, due to different sensitivity of each method to various defect structures, it is possible to distinguish several different types of implantation induced disorder. RS results indicate that a second type of amorphous structure. having medium-range order, grows at the expense of the continuous-random- network structure, even at doses beyond the threshold for complete amorphization.
implantation ; disorder ; GaAs ; Raman spectroscopy
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Podaci o izdanju
120 (1-4)
1996.
236-239
objavljeno
0168-583X
1872-9584
10.1016/S0168-583X(96)00516-2