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Pregled bibliografske jedinice broj: 318604

Morphology of the implantation-induced disorder in GaAs


Desnica, Uroš V.; Desnica, Ida Dunja; Ivanda, Mile; Haynes, T. E.
Morphology of the implantation-induced disorder in GaAs // Nuclear Instruments & Methods in Physics Research Section B - Beam Interactions with Materials and Atoms, 120 (1996), 1-4; 236-239 (međunarodna recenzija, članak, znanstveni)


Naslov
Morphology of the implantation-induced disorder in GaAs

Autori
Desnica, Uroš V. ; Desnica, Ida Dunja ; Ivanda, Mile ; Haynes, T. E.

Izvornik
Nuclear Instruments & Methods in Physics Research Section B - Beam Interactions with Materials and Atoms (0168-583X) 120 (1996), 1-4; 236-239

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Implantation; disorder; GaAs; Raman spectroscopy

Sažetak
Disorder is introduced into GaAs by implantation oi Si-30(+) ions, using a very wide range of ion doses, and studied by Raman scattering (RS) and Rutherford backscattering and ion channeling (RES). A comparative analysis of mechanisms influencing RS and RES signals has been made. This analysis revealed that, due to different sensitivity of each method to various defect structures, it is possible to distinguish several different types of implantation induced disorder. RS results indicate that a second type of amorphous structure. having medium-range order, grows at the expense of the continuous-random-network structure, even at doses beyond the threshold for complete amorphization.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
1-03-066

Ustanove
Institut "Ruđer Bošković", Zagreb

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus