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Pregled bibliografske jedinice broj: 318596

Raman study of gallium arsenide thin films

Desnica-Franković, Ida Dunja; Ivanda, Mile; Kranjčec, M.; Muri, R.; Pinto, N.
Raman study of gallium arsenide thin films // Journal of Non-Crystalline Solids, 170 (1994), 3; 263-269 doi:10.1016/0022-3093(94)90055-8 (međunarodna recenzija, članak, znanstveni)

Raman study of gallium arsenide thin films

Desnica-Franković, Ida Dunja ; Ivanda, Mile ; Kranjčec, M. ; Muri, R. ; Pinto, N.

Journal of Non-Crystalline Solids (0022-3093) 170 (1994), 3; 263-269

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Raman ; GaAs ; amorphous

The influence of deposition parameters on the structure of the gallium arsenide thin films was investigated by Raman scattering. The study was based on the analysis of the first-order Raman spectra which allows for a differentiation between the amorphous component and crystallites of various sizes. The amorphous and crystalline volume fractions were calculated from the integrated intensities of the deconvoluted peaks. It was demonstrated that a transition occurs from μ -GaAs to a-GaAs for particular plasma conditions and substrate temperature. As a function of the deposition parameters the entire range from mostly microcrystalline to completely amorphous films can be obtained. These properties were consistent with the results obtained on the same samples by transmission high-energy electron diffraction and conventional transmission electron microscopy.

Izvorni jezik

Znanstvena područja


Projekt / tema

Institut "Ruđer Bošković", Zagreb,
Geotehnički fakultet, Varaždin

Časopis indeksira:

  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus

Uključenost u ostale bibliografske baze podataka:

  • Chemical Abstracts
  • The INSPEC Science Abstracts series