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Pregled bibliografske jedinice broj: 318534

Raman-scattering measurements and fracton interpretation of vibrational properties of amorphous silicon


Ivanda, Mile
Raman-scattering measurements and fracton interpretation of vibrational properties of amorphous silicon // Physical Review B, 46 (1992), 14893-14897 (međunarodna recenzija, članak, znanstveni)


Naslov
Raman-scattering measurements and fracton interpretation of vibrational properties of amorphous silicon

Autori
Ivanda, Mile

Izvornik
Physical Review B (1098-0121) 46 (1992); 14893-14897

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Raman spectroscopy; amorphous materials; fractal; vibrations

Sažetak
Results of Raman scattering on a-Si:H films are presented at frequencies from 20 to 2500 cm-1. The frequency and temperature dependence of the Stokes/anti-Stokes ratio of Raman scattering intensity show the boson character of the observed broad background signal. It has been shown that the fractal model can be successfully applied to a-Si:H as well. The crossover frequency ω co1 between phonon and fracton regimes and the fractal exponent (σ +d-D)d̃ /D, obtained from the frequency dependence on the Raman scattering intensity, have been determined.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
1-03-066

Ustanove
Institut "Ruđer Bošković", Zagreb

Autor s matičnim brojem:
Mile Ivanda, (135746)

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • SCI-EXP, SSCI i/ili A&HCI


Uključenost u ostale bibliografske baze podataka:


  • Chemical Abstracts
  • The INSPEC Science Abstracts series