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Raman-scattering measurements and fracton interpretation of vibrational properties of amorphous silicon

Results of Raman scattering on a-Si:H films are presented at frequencies from 20 to 2500 cm-1. The frequency and temperature dependence of the Stokes/anti-Stokes ratio of Raman scattering intensity show the boson character of the observed broad background signal. It has been shown that the fractal model can be successfully applied to a-Si:H as well. The crossover frequency ω co1 between phonon and fracton regimes and the fractal exponent (σ +d-D)d̃ /D, obtained from the frequency dependence on the Raman scattering intensity, have been determined.

Raman spectroscopy ; amorphous materials ; fractal ; vibrations

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