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Pregled bibliografske jedinice broj: 317388

Analysis of 2D GISAXS patterns obtained on semiconductor nanocrystals


Buljan, Maja; Salamon, Krešimir; Dubček, Pavo; Bernstorff, Sigrid; Desnica-Franković, Dunja; Milat, Ognjen; Desnica, Uroš
Analysis of 2D GISAXS patterns obtained on semiconductor nanocrystals // Vacuum, 71 (2003), 1-2; 65-70 (međunarodna recenzija, članak, znanstveni)


Naslov
Analysis of 2D GISAXS patterns obtained on semiconductor nanocrystals

Autori
Buljan, Maja ; Salamon, Krešimir ; Dubček, Pavo ; Bernstorff, Sigrid ; Desnica-Franković, Dunja ; Milat, Ognjen ; Desnica, Uroš

Izvornik
Vacuum (0042-207X) 71 (2003), 1-2; 65-70

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
GISAXS; nanocrystals; ion implantation; semiconductor; QDs; SiO2

Sažetak
Grazing incidence small-angle X-ray scattering (GISAXS) was applied in the study of semiconductor nanocrystals embedded in a light matrix. The appropriate mathematical apparatus was developed, so that a full characterization of 3D ensemble of nanoparticles, formed in the implanted layer, can be obtained from GISAXS spectra recorded on two-dimensional (2D) detector. The investigated US nanocrystals in SiO2 substrate were formed by ion beam synthesis and subsequent annealing at 1273 K. From the fits to the theoretical expressions, the average particle diameter, the shape, as well as the size distribution were determined. The obtained results are in good agreement with TEM results performed on the analogous samples.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
0035012
0098020

Ustanove
Institut za fiziku, Zagreb,
Institut "Ruđer Bošković", Zagreb

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus