Effective film thickness influence on self-organization of ge islands on si(100) substrates (CROSBI ID 532278)
Prilog sa skupa u zborniku | sažetak izlaganja sa skupa | međunarodna recenzija
Podaci o odgovornosti
Dubček, Pavo ; Pivac, Branko ; Capan, Ivana ; Radić, Nikola ; Bernstorff, Sigrid
engleski
Effective film thickness influence on self-organization of ge islands on si(100) substrates
Germanium islands were produced by magnetron sputtering of Ge onto monocrystalline silicon, where effective Ge thickness was varied from 2 to 6 nm. The shape and distribution of the islands were investigated using grazing incidence small-angle X-ray scattering (GISAXS) and atomic force microscopy (AFM). The GISAXS experiments revealed that Ge islands height varied from 3 to 6 nm and the lateral dimensions of 10 to 20 nm. However, AFM results indicated bigger sizes, and this is attributed to different resolution ranges of the two experimental techniques. Tuning the deposition conditions and subsequent treatments may allow the control of the size and shape of the islands and consequently the energy levels that drive the light absorption spectra. Such simple process could be of great interest for the third generation of solar cells, aiming to very high efficiencies at low cost.
Ge islands; self-organization
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Podaci o prilogu
TFSEP2-288-x.
2007.
objavljeno
Podaci o matičnoj publikaciji
ABSTRACT CD, IVC17/ICSS13 & ICN+T2007
Westerberg, Lars ; Karlsson, Ulf
Stockholm: Organizing CommitteeABSTRACT CD
Podaci o skupu
IVC17/ICSS13 & ICN+T2007
poster
02.07.2007-06.07.2007
Stockholm, Švedska