engleski

Ion beam synthesis of buried Zn-VI quantum dots in SiO2 - grazing incidence small-angle X-ray scattering studies

Grazing incidence small-angle X-ray scattering was used to study ion-beam synthesized Zn-VI compound- semiconductor quantum dots (QDs), buried in a SiO2 matrix. The ZnTe and ZnS QDs were formed by successive ion implantation of constituent atoms, at high ion doses and subsequent annealing at different temperatures in the 1070-1370 K range. In Zn and Te implanted SiO2, small nano-crystals were formed at higher annealing-temperatures, a bimodal size distribution of nano-particles was observed for both materials, which could be explained by an interplay of Ostwald ripening and enhanced diffusion in the irradiation-damaged region.

grazing incidence ; small-angle X-ray scattering ; ion implantation ; nano-particles ; quantum dots ; ZnS ; ZnTe

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