engleski

Germanium Quantum Dots in Multilayers produced by Magnetron Sputtering

Semiconductor materials in the form of QDs display significant dependence of electronic, optical and other properties on the size of nanoparticles. The particularly strong dependence of the band-gap on the size of Germanium Quantum Dots enables tunability of the nano-Ge band-gap over the considerable part of visible light wavelength-range.This opens a large number of potential applications in semiconductor and other industries. This Report presents results obtained by Grazing Incidence Small Angle X-ray Scattering (GISAXS) technique in studying the synthesis and properties of Ge nanoparticles in SiO2 after co-deposition of Ge and SiO2 with magnetron sputtering followed by thermal treatment.

Self-organization; Quantum Dot; Germanium; Magnetron Sputtering

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