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Pregled bibliografske jedinice broj: 309689

Engineering high-mobility in SrTiO_3-based structures

Herranz, Gervasi; Basletić, Mario; Copie, Olivier; Bibes, Manuel; Carrétéro, Cécile; Tafra, Emil; Jacquet, Eric; Bouzehouane, Karim; Fortuna, F.; Deranlot, Cyrile et al.
Engineering high-mobility in SrTiO_3-based structures // The 14th International Workshop on Oxide Electronics
Jeju Island, Korea, 2007. (predavanje, međunarodna recenzija, sažetak, znanstveni)

Engineering high-mobility in SrTiO_3-based structures

Herranz, Gervasi ; Basletić, Mario ; Copie, Olivier ; Bibes, Manuel ; Carrétéro, Cécile ; Tafra, Emil ; Jacquet, Eric ; Bouzehouane, Karim ; Fortuna, F. ; Deranlot, Cyrile ; Hamzić, Amir ; Barthélémy, Agnes ; Fert, Albert

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

The 14th International Workshop on Oxide Electronics / - Jeju Island, Korea, 2007

The 14th International Workshop on Oxide Electronics

Mjesto i datum
Jeju Island, Korea, 07-10.10.2007

Vrsta sudjelovanja

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Diluted magnetic oxides; magnetoresistance; Shubnikov - de Haas; mobility; spintronics

The future development of micro- and nanoelectronic devices based on oxide structures requires novel materials with high carrier mobility. In this regard, SrTiO_3 (STO) is being intensively investigated due to the dramatic sensitivity of its electronic properties to extrinsic impurity doping. Stoichiometric STO is a band insulator, but an insulator-to-metal transition is induced when STO is doped with extrinsic impurities such as La, Nb or oxygen vacancies with concentrations above 10^16 cm^ -3. In these conditions, the sheet resistance can be as low as 0.01 ohm sq and the electronic mobility can exceed 10^4 cm^2/Vs at low temperature. Vacuum annealing at high temperatures has been the traditional method to dope STO with oxygen vacancies, but recently we have demonstrated that this doping can also be achieved at a much enhanced rate by thin film deposition of oxides on STO substrates at low oxygen pressure and high temperatures. We will address both theoretically and experimentally the mechanisms of oxygen vacancy formation and diffusion in STO to provide a quantitative approach to control the electronic properties of STO. Finally, we will also present results on the generation of carriers in STO, with the objective of achieving two-dimensional conduction. For this purpose, high-magnetic field transport characterization at low temperature is a powerful tool to get insight on the electronic properties and the dimensionality of the high-mobility gas created in STO by the above-mentioned methods.

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Znanstvena područja


Projekt / tema
119-1191458-1023 - Sustavi s prostornim i dimenzijskim ograničenjima: korelacije i spinski efekti (Amir Hamzić, )

Prirodoslovno-matematički fakultet, Zagreb