engleski

Comparison of 1D and 2D model of quantum effects in the simulation of sub-50 nm double-gate MOSFETs

Quantum-mechanical phenomena in sub-50 nanometer double-gate MOSFETs are theoretically considered by a wavefunction approach and Non-Equilibrium Green's Function (NEGF) model was used in the simulations. Simulation results indicate that the classical models are not adequate for the realistic optimization of double-gate MOSFETs. Lateral quantum effects decrease the on-state current by up to 9, 4% in sub-50 nm devices so at least a 2D quantum mechanical simulation is needed in order to predict double-gate transistors characteristics in sub-50 nanometer region.

quantum effects; 2D model; double-gate; MOSFET

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