Revealing the radiation-induced effects in silicon by processing at enhanced temperatures– pressures (CROSBI ID 133500)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Misiuk, A. ; Surma, B. ; Bak-Misiuk, J. ; Londos, C.A. ; Vagovič, P. ; Kovačević, Ivana ; Pivac, Branko ; Jung, W. ; Prujszcyk, M.
engleski
Revealing the radiation-induced effects in silicon by processing at enhanced temperatures– pressures
Effect of processing at up to 1400K under Ar hydrostatic pressure (HP) equal to 1.1 GPa for oxygen-containing Czochralski grown silicon (Cz-Si) irradiated with neutrons (energy E =5 MeV, dose D =1×1017 cm− 2) or -rays (E =1.2 MeV, D =1000 Mrad) on oxygen clustering and precipitation has been investigated by electrical, X-ray, infrared absorption, and photoluminescence methods. Depending on irradiation conditions, processing of irradiated Cz-Si, especially under HP, results in creation of oxygen-containing defects. Such processing of irradiated Cz-Si is helpful for revealing its irradiation-related history.
Czochralski silicon ; irradiation ; microstructure ; hydrostatic pressure
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