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X-Ray Diffraction Study of Structural Changes in GaAs Crystalline Compound Induced by High-Energy Ball Milling and Subsequent Post-Annealing Treatments

X-ray diffraction method was applied to detect structural changes in gallium arsenide (GaAs) crystalline compound induced by the high-energy ball-milling and subsequent post-annealing treatments. During milling (up to 10 h) in air at room temperature the GaAs crystals disintegrate into two phases: one crystalline phase identified as an arsenic oxide (As2O3) and one amorphous phase. During the subsequent annealing (up to 1 h) in the temperature range 450-750 oC, the amorphous phase transforms into gallium oxide (Ga2O3) phase, while (As2O3) phase evaporates and escapes from the solid milled sample. This study is intersting as a recycling path of GaAs and is convenient from the ecological aspect.

arsenic oxide evaporation; crystallization of gallium oxide; decomposition of GaAs compound; GaAs crystals; heat treatment of milled samples; high-energy ball milling; structural changes; X-ray diffraction analysis

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