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Pregled bibliografske jedinice broj: 303545

"Boson" peak in Raman spectra of hydrogenated amorphous silicon


Ivanda, Mile; Furić, Krešimir; Gamulin, Ozren; Gracin, Davor
"Boson" peak in Raman spectra of hydrogenated amorphous silicon // Journal of Non-Crystaline Solids, 137-138 (1991), 1; 103-106 doi:10.1016/S0022-3093(05)80067-5 (međunarodna recenzija, članak, znanstveni)


Naslov
"Boson" peak in Raman spectra of hydrogenated amorphous silicon

Autori
Ivanda, Mile ; Furić, Krešimir ; Gamulin, Ozren ; Gracin, Davor

Izvornik
Journal of Non-Crystaline Solids (0022-3093) 137-138 (1991), 1; 103-106

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Amorphous silicon ; Raman spectroscopy ; boson peak

Sažetak
Hydrogenated amorphous silicon films were prepared by a dc magnetron sputtering method. Broad bacground signal observed in Raman spectra near the excitation line which is recently attributed to the recombination of nonthermal electron with nonhermal holes was decomposed from the phonon bands. The Stokes/anti-Stokes ratio, depolarization ratio and the shape of the bacground signal have the characteristics typical for the non-continous structure of amorphous silicon, composed of the blobs of strongly conected silicon atoms placed around hydrogen clusters.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
1-03-066

Ustanove
Institut "Ruđer Bošković", Zagreb

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


Uključenost u ostale bibliografske baze podataka:


  • Chemical Abstracts
  • The INSPEC Science Abstracts series


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