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Cw laser crystallization of amorphous silicon: Thermal or athermal process


Ivanda, Mile; Furić, Krešimir; Gamulin, Ozren; Peršin, Mirjana; Gracin, Davor
cw laser crystallization of amorphous silicon: Thermal or athermal process // Journal of Applied Physics, 70 (1991), 8; 4637-4639 (međunarodna recenzija, članak, znanstveni)


Naslov
Cw laser crystallization of amorphous silicon: Thermal or athermal process

Autori
Ivanda, Mile ; Furić, Krešimir ; Gamulin, Ozren ; Peršin, Mirjana ; Gracin, Davor

Izvornik
Journal of Applied Physics (0021-8979) 70 (1991), 8; 4637-4639

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Amorphous silicon; laser crystallization; Raman spectroscopy

Sažetak
Hydrogenated amorphous silicon films have been deposited by DC magnetron sputtering on different substrates with different thicknesses and hydrogen concentration. The microscopic area of amorphous layers was crystallized by the focused beam of cw laser. The laser threshold power for transition from the amorphous to crystalline state is dependent on the radius of laser beam, film thickness, material of substrate and hydrogen concentration. These experimental results show that cw laser crystallization of amorphous silicon is a thermal induced process.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
1-03-066

Ustanove
Institut "Ruđer Bošković", Zagreb

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


Uključenost u ostale bibliografske baze podataka:


  • Chemical Abstracts
  • The INSPEC Science Abstracts series