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Pregled bibliografske jedinice broj: 303517

Cw laser crystallization of amorphous silicon: Thermal or athermal process


Ivanda, Mile; Furić, Krešimir; Gamulin, Ozren; Peršin, Mirjana; Gracin, Davor
cw laser crystallization of amorphous silicon: Thermal or athermal process // Journal of Applied Physics, 70 (1991), 8; 4637-4639 (međunarodna recenzija, članak, znanstveni)


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Naslov
Cw laser crystallization of amorphous silicon: Thermal or athermal process

Autori
Ivanda, Mile ; Furić, Krešimir ; Gamulin, Ozren ; Peršin, Mirjana ; Gracin, Davor

Izvornik
Journal of Applied Physics (0021-8979) 70 (1991), 8; 4637-4639

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
amorphous silicon; laser crystallization; Raman spectroscopy

Sažetak
Hydrogenated amorphous silicon films have been deposited by DC magnetron sputtering on different substrates with different thicknesses and hydrogen concentration. The microscopic area of amorphous layers was crystallized by the focused beam of cw laser. The laser threshold power for transition from the amorphous to crystalline state is dependent on the radius of laser beam, film thickness, material of substrate and hydrogen concentration. These experimental results show that cw laser crystallization of amorphous silicon is a thermal induced process.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekti:
1-03-066

Ustanove:
Institut "Ruđer Bošković", Zagreb

Profili:

Avatar Url Davor Gracin (autor)

Avatar Url Ozren Gamulin (autor)

Avatar Url Mile Ivanda (autor)

Avatar Url Mirjana Peršin (autor)

Avatar Url Krešimir Furić (autor)

Citiraj ovu publikaciju

Ivanda, Mile; Furić, Krešimir; Gamulin, Ozren; Peršin, Mirjana; Gracin, Davor
cw laser crystallization of amorphous silicon: Thermal or athermal process // Journal of Applied Physics, 70 (1991), 8; 4637-4639 (međunarodna recenzija, članak, znanstveni)
Ivanda, M., Furić, K., Gamulin, O., Peršin, M. & Gracin, D. (1991) cw laser crystallization of amorphous silicon: Thermal or athermal process. Journal of Applied Physics, 70 (8), 4637-4639.
@article{article, year = {1991}, pages = {4637-4639}, keywords = {amorphous silicon, laser crystallization, Raman spectroscopy}, journal = {Journal of Applied Physics}, volume = {70}, number = {8}, issn = {0021-8979}, title = {cw laser crystallization of amorphous silicon: Thermal or athermal process}, keyword = {amorphous silicon, laser crystallization, Raman spectroscopy} }
@article{article, year = {1991}, pages = {4637-4639}, keywords = {amorphous silicon, laser crystallization, Raman spectroscopy}, journal = {Journal of Applied Physics}, volume = {70}, number = {8}, issn = {0021-8979}, title = {cw laser crystallization of amorphous silicon: Thermal or athermal process}, keyword = {amorphous silicon, laser crystallization, Raman spectroscopy} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


Uključenost u ostale bibliografske baze podataka:


  • Chemical Abstracts
  • The INSPEC Science Abstracts series





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