engleski

GISAXS view of induced morphological changes in of nanostructured CeVO4 thin films

Cerium/vanadium mixed oxide films, designed for application in electrochemical cells and electrochemical devices, were obtained on glass substrates by the sol-gel process. An analysis of structural modification of these films, induced by ultrasonification, annealing and by introduction of lithium ions, was performed, using grazing incidence X-ray scattering (GISAXS) technique. Two-dimensional GISAXS spectra were measured at different grazing angles, starting from slightly below the critical angle. One-dimensional scattering curves were extracted from these spectra, showing the dependence of the scattering intensity on different components of the wave vector in the scattering plane. These extractions - "cuts" in differnt directions enable a specific film depth nanostructural profiling.

GISAXS; cerium/vanadium oxide films

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