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Porous Silicon Prepared on a Thin Epitaxial Silicon Layer: Structure and Optical properties


Balarin, Maja; Gamulin, Ozren; Ivanda, Mile; Ristić, Mira; Musić, Svetozar; Furić, Krešimir
Porous Silicon Prepared on a Thin Epitaxial Silicon Layer: Structure and Optical properties // MIPRO 2007 30th Jubilee International Convention / Biljanović, Petar ; Skala, Karolj (ur.).
Rijeka: Croatian Society for Information and Communication Technology, Electronics and Microelectronics - MIPRO, 2007. str. 31-35 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)


Naslov
Porous Silicon Prepared on a Thin Epitaxial Silicon Layer: Structure and Optical properties

Autori
Balarin, Maja ; Gamulin, Ozren ; Ivanda, Mile ; Ristić, Mira ; Musić, Svetozar ; Furić, Krešimir

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
MIPRO 2007 30th Jubilee International Convention / Biljanović, Petar ; Skala, Karolj - Rijeka : Croatian Society for Information and Communication Technology, Electronics and Microelectronics - MIPRO, 2007, 31-35

ISBN
978-953-233-032-8

Skup
MIPRO 2007: Microelectronics, Electronics and Electronic Technologies Conference

Mjesto i datum
Opatija, Hrvatska, 21-25. 05. 2007

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Porous silicon; nanostructures; Raman and FT-IR spectroscopy; SEM images

Sažetak
Commercially available silicon-on-insulator (SOI) wafers, consisting of 45  m tick p-type (111) epitaxial layer grown on a thin 100 nm SiO2 layer on n-type silicon substrate were electrochemical etched to produce porous silicon (PSi) samples. At 50% concentration of 48% hydrofluoric acid (HF) in ethanol solution the micro- and nano-sized pores were obtained. The structural and the optical properties of prepared sample were investigated by Raman spectroscopy, Fourier transform infrared spectroscopy (FT-IR) and scanning electron microscopy (SEM). SEM images showed high density of micrometer sized pores. Nanometer sized structures were observed by the phonon confinement effects of the optical and acoustic phonon bands in the Raman spectra. The broadening of crystal silicon (c-Si) transversal optical TO( ) band at 520 cm-1, was observed in substrate sample. At the same time the wide transversal acoustical (TA)-like phonon band at 150 cm-1, that characterizes the short range confinement, also appeared in the same sample. FT-IR spectra exhibited numerous bands from Si-Hx and H-Si(Si3-nOn) groups. The sample also showed photoluminescence (PL) peak in the visible spectral range. The change in the intensity, width and the position of the PL peak showed strong sensitivity to the influence of different environment conditions such as air, vacuum and acetone.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
098-0982904-2898 - Fizika i primjena nanostruktura i volumne tvari (Mile Ivanda, )
098-0982904-2952 - Sinteza i mikrostruktura metalnih oksida i oksidnih stakala (Mira Ristić, )
108-1080134-3105 - Mehanizmi narušavanja strukture lipoproteina djelovanjem vanjskih čimbenika (Ozren Gamulin, )
108-1080399-0383 - Muški i ženski spolni sustav: razvoj, normalna histofiziologija i neplodnost (Davor Ježek, )

Ustanove
Institut "Ruđer Bošković", Zagreb,
Medicinski fakultet, Zagreb