Structural characterization of thin amorphous Si films (CROSBI ID 132209)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Grozdanić, Danijela ; Rakvin, Boris ; Pivac, Branko ; Dubček, Pavo ; Radić, Nikola ; Bernstorff, Sigrid
engleski
Structural characterization of thin amorphous Si films
We present a study of structural changes occurring in thin amorphous silicon (a-Si). The a-Si films were deposited on single-crystalline Si substrates held at room temperature or 200 °C by magnetron sputtering of a Si target in pure Ar atmosphere, and therefore the films were hydrogen-free. All samples were annealed in vacuum and subsequently studied by EPR and GISAXS. A strong decrease in the dangling bonds content at lower annealing temperatures, and then an increase of it at around 550 °C, suggested significant structural changes. In parallel the samples were studied by GISAXS which confirmed changes at the nanometric scale attributed to voids in the material. A nice correlation of the results of the two techniques shows advantages of this approach in the analysis of structural changes in a-Si material.
Amorphous silicon; Nanostructures; Small angle X-ray scattering; Electron paramagnetic resonance
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