Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing (CROSBI ID 132192)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Kovačević, Ivana ; Pivac, Branko ; Dubček, Pavo ; Zorc, Hrvoje ; Radić, Nikola ; Bernstorff, Sigrid ; Campione, Mario ; Sassella, Adele
engleski
Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing
We have deposited a 12 nm thick Ge layer on Si(1 0 0) held at 200 8C by thermal evaporation under high vacuum conditions. Upon subsequent thermal annealing in vacuum, self-assembled growth of nanostructural Ge islands on the Ge layer occurred. Atomic force microscopy (AFM) and grazing incidence small-angle X-ray scattering (GISAXS) were used to characterize such layers. GISAXS measurements evidenced the formation of cylinder shaped structures upon annealing at 700 8C, which was confirmed by AFM measurements with a very sharp tip. A Ge mass transport from the layer to the islands was inferred by X-ray reflectivity and an activation energy of 0.40 0.10 eV for such a process was calculated.
Ge nanostructures; X-ray reflectivity; Ge islands; Atomic force microscopy
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Podaci o izdanju
253 (6)
2007.
3034-3040
objavljeno
0169-4332
1873-5584
10.1016/j.apsusc.2006.06.048