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The structural ordering of thin silicon films at the amorphous to nano-crystalline phase transition by GISAXS and Raman spectroscopy


Gracin, Davor; Juraić, Krunoslav; Gajović, Andreja; Dubček, Pavo; Devilee, Cecli; Muffler, Hans Joachim; Soppe, Wim, J.; Bernstorff, Sigrid
The structural ordering of thin silicon films at the amorphous to nano-crystalline phase transition by GISAXS and Raman spectroscopy // Renewable energy, 33 (2008), 2; 326-330 (međunarodna recenzija, članak, znanstveni)


Naslov
The structural ordering of thin silicon films at the amorphous to nano-crystalline phase transition by GISAXS and Raman spectroscopy

Autori
Gracin, Davor ; Juraić, Krunoslav ; Gajović, Andreja ; Dubček, Pavo ; Devilee, Cecli ; Muffler, Hans Joachim ; Soppe, Wim, J. ; Bernstorff, Sigrid

Izvornik
Renewable energy (0960-1481) 33 (2008), 2; 326-330

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Nano-crystalline silicon; Raman; GISAXS

Sažetak
Thin silicon films were deposited by the plasma enhanced chemical vapour deposition method using microwave (MW) and standard radio frequency (RF) gas discharge in silane gas diluted by hydrogen in the range that produces a mixture of amorphous and crystalline phases. The samples were analysed by Raman spectroscopy and grazing incidence small angle X-ray scattering (GISAXS), while the threshold for the transition between the amorphous and crystalline phase was checked by the change in electrical conductivity. The crystalline fraction, estimated by Raman spectroscopy, varied between 0 and 70% while the individual crystal sizes were between 3 and 9 nm. However, the size distribution was broad suggesting also the existence of smaller and larger crystals. The “ particles” observed by GISAXS, most probably voids, were in the range between 2 and 12 nm. The voids in samples deposited by MW plasma were larger when closer to the surface. Their shape indicated the formation of a columnar structure perpendicular to the surface, more pronounced at higher temperature. The samples deposited by RF plasma and low power had spherically symmetric "particles" with uniform size across the depth of the samples. An increase of the RF power resulted in the formation of a columnar structure parallel to the surface. The observed differences are discussed in relation to the difference in growing kinetics of the used deposition methods.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

Napomena
E-MRS 2006 Symposium M: Materials, Devices and Prospects for Sustainable Energy, 2006 Spring Meeting of the European Materials Research Society Nice, France, 29 May-02 June 2006, Edited by A. Jaeger-Waldau, M Jurczyk, R.D. McConnell, L. Chen and A. Züttel



POVEZANOST RADA


Projekt / tema
098-0982886-2866 - Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima (Branko Pivac, )
098-0982886-2894 - Tanki filmovi legura silicija na prijelazu iz amorfne u uređenu strukturu (Davor Gracin, )
098-0982886-2895 - Novi amorfni i nanostrukturirani tankoslojni materijali (Nikola Radić, )
098-0982886-2897 - Poluvodički materijali za optoelektroniku i nanotehnologiju (Branko Šantić, )
098-0982904-2898 - Fizika i primjena nanostruktura i volumne tvari (Mile Ivanda, )

Ustanove
Institut "Ruđer Bošković", Zagreb

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus