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U doping effects in (Ce1-xUx)NiSn


Park, Je-Geun; Očko, Miroslav; Mcewen, K.A
U doping effects in (Ce1-xUx)NiSn // Physical review B : condensed matter, 57 (1998), 21; 13706-13711 (međunarodna recenzija, članak, znanstveni)


Naslov
U doping effects in (Ce1-xUx)NiSn

Autori
Park, Je-Geun ; Očko, Miroslav ; Mcewen, K.A

Izvornik
Physical review B : condensed matter (0163-1829) 57 (1998), 21; 13706-13711

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
CeNiSn; semiconductor; antiferromagnetic correlations; energy gap; thermopower

Sažetak
We have studied (Ce1-xUx)NiSn for 0 less than or equal to x less than or equal to 0.2 to investigate the effects of U doping on the low-temperature anomalies seen in CeNiSn. From resistivity and thermopower results, we conclude that with as small as 1.6% U doping the anomalies disappear. With further increasing U concentrations, the system becomes unstable towards a weakly antiferromagnetic transition. We discuss the effects due to small U doping at low temperatures in the light of chemical pressure effects and Fermi-level tuning.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
00350105

Ustanove
Institut za fiziku, Zagreb

Autor s matičnim brojem:
Miroslav Očko, (176485)

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • SCI-EXP, SSCI i/ili A&HCI