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U doping effects in (Ce1-xUx)NiSn (CROSBI ID 83958)

Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija

Park, Je-Geun ; Očko, Miroslav ; Mcewen, K.A U doping effects in (Ce1-xUx)NiSn // Physical review. B, Condensed matter and materials physics, 57 (1998), 21; 13706-13711. doi: 10.1103/PhysRevB.57.13706

Podaci o odgovornosti

Park, Je-Geun ; Očko, Miroslav ; Mcewen, K.A

engleski

U doping effects in (Ce1-xUx)NiSn

We have studied (Ce1-xUx)NiSn for 0 less than or equal to x less than or equal to 0.2 to investigate the effects of U doping on the low-temperature anomalies seen in CeNiSn. From resistivity and thermopower results, we conclude that with as small as 1.6% U doping the anomalies disappear. With further increasing U concentrations, the system becomes unstable towards a weakly antiferromagnetic transition. We discuss the effects due to small U doping at low temperatures in the light of chemical pressure effects and Fermi-level tuning.

CeNiSn ; semiconductor ; antiferromagnetic correlations ; energy gap ; thermopower

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Podaci o izdanju

57 (21)

1998.

13706-13711

objavljeno

1098-0121

1550-235X

10.1103/PhysRevB.57.13706

Povezanost rada

Fizika

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