U doping effects in (Ce1-xUx)NiSn (CROSBI ID 83958)
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Podaci o odgovornosti
Park, Je-Geun ; Očko, Miroslav ; Mcewen, K.A
engleski
U doping effects in (Ce1-xUx)NiSn
We have studied (Ce1-xUx)NiSn for 0 less than or equal to x less than or equal to 0.2 to investigate the effects of U doping on the low-temperature anomalies seen in CeNiSn. From resistivity and thermopower results, we conclude that with as small as 1.6% U doping the anomalies disappear. With further increasing U concentrations, the system becomes unstable towards a weakly antiferromagnetic transition. We discuss the effects due to small U doping at low temperatures in the light of chemical pressure effects and Fermi-level tuning.
CeNiSn ; semiconductor ; antiferromagnetic correlations ; energy gap ; thermopower
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Podaci o izdanju
57 (21)
1998.
13706-13711
objavljeno
1098-0121
1550-235X
10.1103/PhysRevB.57.13706