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X-ray diffraction study of the system Ga2Se3-In2Te3

A series of solid solutions in the system (Ga_xIn_(1- x))_2(Se_xTe_(1-x))_3, 1>x>0, were prepared by direct synthesis from alpha-Ga_2Se_3 and alpha-In_2Te_3. The samples (powders and single crystals) were examined at room temperature by X-ray diffraction. In the whole range of concentrations cubic phase of defect zinc-blende types (ZB) are present. The unit-cell parameter, a_(ZB), continuously increases with the In_2Te_3 content, undergoing an abrupt change at x~0.5. In the Ga_2Se_3-rich region the diffraction lines show complex profiles, similar to the ones of alpha-Ga_2Se_3, and of (Ga_xIn_(1-x))_2Se_3 in the Ga-rich region. In the In_2Te_3-rich region the diffraction pattern is similar to that of the distordered beta phase of In_2Te_3.

Ga_2Se_3-In_2Te_3 solid solutions ; X-ray diffraction

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