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Pregled bibliografske jedinice broj: 285635

Electrically active defects in silicon and germanium induced by radiation


Capan, Ivana
Electrically active defects in silicon and germanium induced by radiation 2006., doktorska disertacija, Prirodoslovno-matematički fakultet, Zagreb


Naslov
Electrically active defects in silicon and germanium induced by radiation

Autori
Capan, Ivana

Vrsta, podvrsta i kategorija rada
Ocjenski radovi, doktorska disertacija

Fakultet
Prirodoslovno-matematički fakultet

Mjesto
Zagreb

Datum
16.11

Godina
2006

Stranica
153

Mentor
Pivac, Branko

Ključne riječi
Silicon; germanium; defects; deep level transient spectroscopy

Sažetak
Aa

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
0098020

Ustanove
Institut "Ruđer Bošković", Zagreb

Citiraj ovu publikaciju

Capan, Ivana
Electrically active defects in silicon and germanium induced by radiation 2006., doktorska disertacija, Prirodoslovno-matematički fakultet, Zagreb
Capan, I. (2006) 'Electrically active defects in silicon and germanium induced by radiation', doktorska disertacija, Prirodoslovno-matematički fakultet, Zagreb.
@phdthesis{phdthesis, author = {Capan, I.}, year = {2006}, pages = {153}, keywords = {silicon, germanium, defects, deep level transient spectroscopy}, title = {Electrically active defects in silicon and germanium induced by radiation}, keyword = {silicon, germanium, defects, deep level transient spectroscopy}, publisherplace = {Zagreb} }