Drift-Diffusion Simulation of InSb Devices (CROSBI ID 524287)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Sijercic, Edin ; Mueller, Kurt ; Pejčinović, Branimir
engleski
Drift-Diffusion Simulation of InSb Devices
A methodology for simulation of InSb devices in standard drift-diffusion simulators is presented. Material complexities, such as non-parabolicity, degeneracy, mobility and Auger recombination/generation are explained, and physics based models are developed. This methodology is then applied to the examination of low leakage room temperature InSb photodiodes.
InSb devices; drift-diffusion simulation
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Podaci o prilogu
43-46-x.
2004.
objavljeno
Podaci o matičnoj publikaciji
Proc. 12th IEEE Mediterranean Electrotechnical Conference, MELECON 2004, vol. 1
M. Matijašević, B. Pejčinović, Z. Tomšić, Z. Butković
Institute of Electrical and Electronics Engineers (IEEE)
Podaci o skupu
12th IEEE Mediterranean Electrotechnical Conference, MELECON 2004
predavanje
12.05.2004-15.05.2004
Hrvatska
