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Silicon Nanocrystals by Thermal Annealing of Silicon Rich Oxide Prepared by the LPCVD Method


Ivanda, Mile; Furić, Krešimir; Musić, Svetozar; Ristić, Mira; Gebavi, Hrvoje; Ristić, Davor; Gamulin, Ozren; Balarin, Maja
Silicon Nanocrystals by Thermal Annealing of Silicon Rich Oxide Prepared by the LPCVD Method // XXVIII European Congress on Molecular Spectroscopy (EUCMOS) : abstracts / Akyuz, Sevim ; Akalin, Elif (ur.).
Istanbul: Istanbul University, 2006. str. 223-223 (poster, međunarodna recenzija, sažetak, znanstveni)


Naslov
Silicon Nanocrystals by Thermal Annealing of Silicon Rich Oxide Prepared by the LPCVD Method

Autori
Ivanda, Mile ; Furić, Krešimir ; Musić, Svetozar ; Ristić, Mira ; Gebavi, Hrvoje ; Ristić, Davor ; Gamulin, Ozren ; Balarin, Maja

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Izvornik
XXVIII European Congress on Molecular Spectroscopy (EUCMOS) : abstracts / Akyuz, Sevim ; Akalin, Elif - Istanbul : Istanbul University, 2006, 223-223

Skup
European Congress on Molecular Spectroscopy (28 ; 2996)

Mjesto i datum
Istanbul, Turska, 3.-8.09.2006

Vrsta sudjelovanja
Poster

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Ailicon oxide; LPCVD; IR and Raman and UV/Vis spectroscopy; SEM; TEM; AFM

Sažetak
The silicon rich oxide (SiO_x)thin films are prepared on quartz and silicon crystaline substrates by low pressure chemical vapor deposition (LPCVD) method at the temperatures 700 - 900 ^oC. The structural and optical properties of the samples are investigated by Raman and infrared spectroscopy UV/Visible absorption spectroscopy and scanning, transmition electron and atomic force microscopies (SEM, TEM and AFM).

Izvorni jezik
Engleski

Znanstvena područja
Fizika



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