Silicon Nanocrystals by Thermal Annealing of Silicon Rich Oxide Prepared by the LPCVD Method (CROSBI ID 522901)
Prilog sa skupa u zborniku | sažetak izlaganja sa skupa | međunarodna recenzija
Podaci o odgovornosti
Ivanda, Mile ; Furić, Krešimir ; Musić, Svetozar ; Ristić, Mira ; Gebavi, Hrvoje ; Ristić, Davor ; Gamulin, Ozren ; Balarin, Maja
engleski
Silicon Nanocrystals by Thermal Annealing of Silicon Rich Oxide Prepared by the LPCVD Method
The silicon rich oxide (SiO_x)thin films are prepared on quartz and silicon crystaline substrates by low pressure chemical vapor deposition (LPCVD) method at the temperatures 700 - 900 ^oC. The structural and optical properties of the samples are investigated by Raman and infrared spectroscopy UV/Visible absorption spectroscopy and scanning, transmition electron and atomic force microscopies (SEM, TEM and AFM).
ailicon oxide; LPCVD; IR and Raman and UV/Vis spectroscopy; SEM; TEM; AFM
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Podaci o prilogu
223-223.
2006.
objavljeno
Podaci o matičnoj publikaciji
XXVIII European Congress on Molecular Spectroscopy (EUCMOS) : abstracts
Akyuz, Sevim ; Akalin, Elif
Istanbul: Istanbul Technical University (ITU) ; Goethe-Institut Istanbul
Podaci o skupu
European Congress on Molecular Spectroscopy (28 ; 2996)
poster
03.09.2006-08.09.2006
Istanbul, Turska
