engleski

Silicon nanocrystals by thermal annealing of Si-rich silicon oxide prepared by the LPCVD method

The Si-rich silicon oxide (SiO_x)thin films are prepared on silicon crystalline substrates by low pressure chemical vapor deposition (LPCVD) method. The oxigen concentrations x are controlled by the ratio of the partial pressures of N_2O and SiH_4 gases in the reaction chamber. In order to induce the phase separation on SiO_2 and Si nanostructures the samples are annealed at the temperatures 900-1100 ^oC. The structural and optical properties of the samples are investigated by Raman and infrared spectroscopy and scanning electron microscopy.

Si-rich silicon oxide ; LPCVD ; Raman scattering ; low frequency particle modes

Rad je prezentiran na skupu XXVIIIth European Congress on Molecular Spectroscopy "Molecular Spectroscopy and Molecular Structure", održanom od 03.–08.09.2006.g., Istanbul, Turska.