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Pregled bibliografske jedinice broj: 263951

Low Pressure Chemical Vapour Deposition of Silicon and Silicon Dioxide Thin Films for Thin Thermal Heater


Žonja, Sanja; Biljanović, Petar; Ivanda, Mile; Gebavi, Hrvoje; Ristić, Davor; Furić, Krešimir; Musić, Svetozar; Ristić, Mira; Gamulin, Ozren
Low Pressure Chemical Vapour Deposition of Silicon and Silicon Dioxide Thin Films for Thin Thermal Heater // 42nd International conference on microelectronics, device and materials and the workshop on MEMS and NEMS : proceedimngs / Vrtačnik, D. ; Amon, S. ; Šorli I. (ur.).
Ljubljana: MIDEM, 2006. str. 297-302 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)


Naslov
Low Pressure Chemical Vapour Deposition of Silicon and Silicon Dioxide Thin Films for Thin Thermal Heater

Autori
Žonja, Sanja ; Biljanović, Petar ; Ivanda, Mile ; Gebavi, Hrvoje ; Ristić, Davor ; Furić, Krešimir ; Musić, Svetozar ; Ristić, Mira ; Gamulin, Ozren

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
42nd International conference on microelectronics, device and materials and the workshop on MEMS and NEMS : proceedimngs / Vrtačnik, D. ; Amon, S. ; Šorli I. - Ljubljana : MIDEM, 2006, 297-302

Skup
International conference on microelectronics, device and materials and the workshop on MEMS and NEMS (42 ; 2006)

Mjesto i datum
Strunjan, Slovenija, 13.-15.09.2006

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
LPCVD thermal heater

Sažetak
Low pressure chemical vapour deposition was used to deposit different silicon and silicon dioxide structures for thin film thermal heater by varying the working gas composition and substrate temperature. Silane gas diluted with argon was used to deposit silicon layers on different temperatures between 600 ^oC and 900 ^oC. BCl_3 was used for doping of polycrystalline silicon films to assure desirable resistivity values. The SiO_2 layers were prepared by wet oxidation in thermal diffusion reactor. Raman and IR spectroscopy, SEM and AFM analysis and electrical measurements were used for examining the structure and optical properties of prepared layers.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Elektrotehnika



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