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Low Pressure Chemical Vapour Deposition of Silicon and Silicon Dioxide Thin Films for Thin Thermal Heater

Low pressure chemical vapour deposition was used to deposit different silicon and silicon dioxide structures for thin film thermal heater by varying the working gas composition and substrate temperature. Silane gas diluted with argon was used to deposit silicon layers on different temperatures between 600 ^oC and 900 ^oC. BCl_3 was used for doping of polycrystalline silicon films to assure desirable resistivity values. The SiO_2 layers were prepared by wet oxidation in thermal diffusion reactor. Raman and IR spectroscopy, SEM and AFM analysis and electrical measurements were used for examining the structure and optical properties of prepared layers.

LPCVD thermal heater

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