engleski

Influence of Silicon Body Thickness of Vertical Silicon on Nothing (SON) MOSFET with Nitride Nate Dielectric on Electrical Characteristics

The scaling properties of a Vertical Fully Depleted Silicon-on-Nothing (VFDSONFET) structure are examined by means of device simulations. The short channel effects of the VFDSONFET with 80 nm channel length can be improved by reducing the buried dielectric thickness, silicon body thickness, and using a lower-k material as the buried dielectric. The silicon body thickness has the greatest effect on the short channel effect, resulting from the associated capacitance dominating over the buried dielectric capacitance. The drain field effect in the channel region near the source is analyzed, showing that the use of a lower-k buried dielectric localizes the field near the drain and results in a higher potential barrier near the source.

vertical MOSFET; silicon-on-nothing

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