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Pregled bibliografske jedinice broj: 257212

Ion beam synthesis and characterization of Ge nanoparticles in SiO2


Desnica, Uroš V.; Buljan, Maja; Dubček, Pavo; Siketić, Zdravko; Bogdanović Radović, Ivančica; Bernstorff, S.; Serincan, U.; Turan, R.
Ion beam synthesis and characterization of Ge nanoparticles in SiO2 // Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials & Atoms, 249 (2006), 843-846 (međunarodna recenzija, članak, znanstveni)


Naslov
Ion beam synthesis and characterization of Ge nanoparticles in SiO2

Autori
Desnica, Uroš V. ; Buljan, Maja ; Dubček, Pavo ; Siketić, Zdravko ; Bogdanović Radović, Ivančica ; Bernstorff, S. ; Serincan, U. ; Turan, R.

Izvornik
Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials & Atoms (0168-583X) 249 (2006); 843-846

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Ion beam mixing; RBS; GISAXS; XRD; nanocrystals; Ge implantation

Sažetak
Ge quantum dots embedded in SiO2 have been obtained by implantation of Ge ions in the 10(16)-10(17) cm(-2) dose range, followed by post-implantation annealing in the temperature range T-a = 300-1000 degrees C. Using Rutherford back-scattering, grazing incidence X-ray diffraction and grazing incidence small angle X-ray scattering it was found that Ge-QDs are synthesized as discrete, spherical QDs, with radius ranging from 1.7 to 10 nm, depending on dose and T-a. For T-a above 800 degrees C the Ge atom diffusion becomes considerable, leading to a strong increase of both size and size distribution of Ge QDs, but still without sizeable loss of Ge atoms from the implanted layer.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



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Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus