engleski

Transient Response Times of a-Si:H p-i-n Color Detector

Transients and relevant response times of a-Si:H p-i-n photodetector under various illuminations (in the visible range) and bias voltage conditions were studied. The model/method for possible color detection using "on" and "off" transient response times is proposed. Depending on illumination and bias pulse types, one or two processes are found to be involved in the conduction mechanism, including transition and trapping of both charge carrier types. Characteristic photocurrent transients and response times under modulated monochromatic and chromatic visible light illumination enable color recognition. The peculiar behavior of the blue light transients has been also plausibly explained by means of the proposed model.

amorphous silicon; color; detectors; response time; thin-film devices; transient analysis; transient response

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