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The influence of substrate morphology on growth of thin silicon films by GISAXS


Gracin, Davor; Bernstorff, Sigrid; Dubček, Pavo; Gajović, Andreja; Juraić, Krunoslav
The influence of substrate morphology on growth of thin silicon films by GISAXS // Thin Solid Films, 515 (2007), 14; 5615-5619 (međunarodna recenzija, članak, znanstveni)


Naslov
The influence of substrate morphology on growth of thin silicon films by GISAXS

Autori
Gracin, Davor ; Bernstorff, Sigrid ; Dubček, Pavo ; Gajović, Andreja ; Juraić, Krunoslav

Izvornik
Thin Solid Films (0040-6090) 515 (2007), 14; 5615-5619

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Amorphous silicon; nanocrystalline silicon; GISAXS; Raman

Sažetak
Thin Si films, with thicknesses between 100 and 300 nm, were deposited by PECVD (Plasma Enhanced Chemical Vapour Deposition) in silane gas (SiH4) highly diluted by hydrogen. The dilution was varied between 24 and 5% of silane in the working gas and power density between 5 and 15 mW/cm2. Two types of substrates were used. The first one was amorphous and relatively flat while second was polycrystalline with roughness of few tens of nano- meters. The crystal fraction in deposited samples, estimated by Raman spectroscopy, varied between 0 and 40% and individual crystal size was between 2 and 8 nm. The larger individual crystals are usually present in samples with highest crystal fraction. The sample density, estimated upon the spectral distribution of dielectric function in the infra red, was 15- 25% less than the crystalline silicon. GISAXS has been performed at the ELETTRA synchrotron radiation source, Trieste (Italy). The pattern of all the examined samples indicated the presence of not - spherical-like "particles" in the "bulk" of thin films, with average size between 1.5 and 4 nm. The "particles" are most probably voids and theirs shape indicate columnar growth. By GISAXS on the samples deposited on different substrates, the borderline deposition conditions between "transport limited growth" and growth dominantly influenced on plasma surface reactions was estimated.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

Napomena
The Ninth International Conference on Surface X-Ray and Neutron Scattering - 9SXNS, The Ninth International Conference on Surface X-Ray and Neutron Scattering, Taipei, Taiwan



POVEZANOST RADA


Projekt / tema
098-0982886-2866 - Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima (Branko Pivac, )
098-0982886-2894 - Tanki filmovi legura silicija na prijelazu iz amorfne u uređenu strukturu (Davor Gracin, )
098-0982886-2895 - Novi amorfni i nanostrukturirani tankoslojni materijali (Nikola Radić, )
098-0982904-2898 - Fizika i primjena nanostruktura i volumne tvari (Mile Ivanda, )

Ustanove
Institut "Ruđer Bošković", Zagreb

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus