engleski

Complementality of nuclear-based analytical techniques for the characterization of thin film technological materials

Two thin film tehnological materials (A/B) from the aerospace industry have been characterized for their elemental composition, for the purpose of determinating their purity and trace element distribution. The results contribute to the assessment of the materials? suitability for maintaining stable temperature for a chamber in space. Analysis was done using a combination of PIXE/RBS and energy dispersive x-ray fluorescence (EDXRF) analytical techniques. Samples of the materials were analyzed with PIXE/RBS system using 2MeV proton beam from a 1 MV Tandetron accelerator, and also with separate EDXRF systems employing Am-241 and Mo-tube as excitation sources. PIXE/RBS measurements enabled identification of the elemental composition and elucidation of the layer structure of the materials. From the PIXE/RBS results, Am-241-excited EDXRF technique was selected for quantitative determination of indium (In) and tin (Sn) by their K-x-rays, after reasonable absorption corrections. A comparison has been made of the results obtained from EDXRF and PIXE/RBS. Material A has been found to be a thin film with three layers, while material B is a thin film comprising of four layers. Thicknesses and compositions (including trace elements) of all layers have been determined. The limitation of EDXRF in the analysis of inhomogeneously distributed elements was overcome by using PIXE/RBS as an appropriate complimentary technique.

EDXRF; PIXE/RBS; trace elements

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