Matthiessen's rule in MgB(2) : Resistivity and T(c) as a function of point defect concentration (CROSBI ID 124589)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Sipos, B. ; Barišić, Neven ; Gaal, R ; Forró, L. ; Krapinski, J. ; Rullier-Albenque, F.
engleski
Matthiessen's rule in MgB(2) : Resistivity and T(c) as a function of point defect concentration
We present the results of a systematic study of the temperature-dependent resistivity and of T(c) of a single crystal MgB(2) sample as a function of point defect concentration. We have found linear, albeit weak, correlation between the decreasing superconducting critical temperature and the residual resistivity and no variation of the slope of the rho(T) curve at high temperature. These findings reinforce the already existing picture of s-wave pairing for the superconductivity. The interband scattering is low despite increasing disorder. Somewhat surprisingly, Matthiessen's rule is followed even in this two-band metal.
MgB(2); Matthiessen's rule
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Podaci o izdanju
76 (134)
2007.
132504-1-132504-3
objavljeno
1098-0121
10.1103/PhysRevB.76.132504
Povezanost rada
Fizika