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Matthiessen's rule in MgB(2) : Resistivity and T(c) as a function of point defect concentration (CROSBI ID 124589)

Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija

Sipos, B. ; Barišić, Neven ; Gaal, R ; Forró, L. ; Krapinski, J. ; Rullier-Albenque, F. Matthiessen's rule in MgB(2) : Resistivity and T(c) as a function of point defect concentration // Physical review. B, Condensed matter and materials physics, 76 (2007), 134; 132504-1-132504-3. doi: 10.1103/PhysRevB.76.132504

Podaci o odgovornosti

Sipos, B. ; Barišić, Neven ; Gaal, R ; Forró, L. ; Krapinski, J. ; Rullier-Albenque, F.

engleski

Matthiessen's rule in MgB(2) : Resistivity and T(c) as a function of point defect concentration

We present the results of a systematic study of the temperature-dependent resistivity and of T(c) of a single crystal MgB(2) sample as a function of point defect concentration. We have found linear, albeit weak, correlation between the decreasing superconducting critical temperature and the residual resistivity and no variation of the slope of the rho(T) curve at high temperature. These findings reinforce the already existing picture of s-wave pairing for the superconductivity. The interband scattering is low despite increasing disorder. Somewhat surprisingly, Matthiessen's rule is followed even in this two-band metal.

MgB(2); Matthiessen's rule

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Podaci o izdanju

76 (134)

2007.

132504-1-132504-3

objavljeno

1098-0121

10.1103/PhysRevB.76.132504

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