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Pregled bibliografske jedinice broj: 253823

Matthiessen's rule in MgB(2) : Resistivity and T(c) as a function of point defect concentration


Sipos, B.; Barišić, Neven; Gaal, R; Forró, L.; Krapinski, J.; Rullier-Albenque, F.
Matthiessen's rule in MgB(2) : Resistivity and T(c) as a function of point defect concentration // Physical Review B - Condensed Matter and Materials Physics, 76 (2007), 134; 132504-1 doi:10.1103/PhysRevB.76.132504 (međunarodna recenzija, članak, znanstveni)


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Naslov
Matthiessen's rule in MgB(2) : Resistivity and T(c) as a function of point defect concentration

Autori
Sipos, B. ; Barišić, Neven ; Gaal, R ; Forró, L. ; Krapinski, J. ; Rullier-Albenque, F.

Izvornik
Physical Review B - Condensed Matter and Materials Physics (1098-0121) 76 (2007), 134; 132504-1

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
MgB(2); Matthiessen's rule

Sažetak
We present the results of a systematic study of the temperature-dependent resistivity and of T(c) of a single crystal MgB(2) sample as a function of point defect concentration. We have found linear, albeit weak, correlation between the decreasing superconducting critical temperature and the residual resistivity and no variation of the slope of the rho(T) curve at high temperature. These findings reinforce the already existing picture of s-wave pairing for the superconductivity. The interband scattering is low despite increasing disorder. Somewhat surprisingly, Matthiessen's rule is followed even in this two-band metal.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Profili:

Avatar Url Neven Barišić (autor)

Citiraj ovu publikaciju

Sipos, B.; Barišić, Neven; Gaal, R; Forró, L.; Krapinski, J.; Rullier-Albenque, F.
Matthiessen's rule in MgB(2) : Resistivity and T(c) as a function of point defect concentration // Physical Review B - Condensed Matter and Materials Physics, 76 (2007), 134; 132504-1 doi:10.1103/PhysRevB.76.132504 (međunarodna recenzija, članak, znanstveni)
Sipos, B., Barišić, N., Gaal, R., Forró, L., Krapinski, J. & Rullier-Albenque, F. (2007) Matthiessen's rule in MgB(2) : Resistivity and T(c) as a function of point defect concentration. Physical Review B - Condensed Matter and Materials Physics, 76 (134), 132504-1 doi:10.1103/PhysRevB.76.132504.
@article{article, year = {2007}, pages = {132504-1-132504-3}, DOI = {10.1103/PhysRevB.76.132504}, keywords = {MgB(2), Matthiessen's rule}, journal = {Physical Review B - Condensed Matter and Materials Physics}, doi = {10.1103/PhysRevB.76.132504}, volume = {76}, number = {134}, issn = {1098-0121}, title = {Matthiessen's rule in MgB(2) : Resistivity and T(c) as a function of point defect concentration}, keyword = {MgB(2), Matthiessen's rule} }
@article{article, year = {2007}, pages = {132504-1-132504-3}, DOI = {10.1103/PhysRevB.76.132504}, keywords = {MgB(2), Matthiessen's rule}, journal = {Physical Review B - Condensed Matter and Materials Physics}, doi = {10.1103/PhysRevB.76.132504}, volume = {76}, number = {134}, issn = {1098-0121}, title = {Matthiessen's rule in MgB(2) : Resistivity and T(c) as a function of point defect concentration}, keyword = {MgB(2), Matthiessen's rule} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


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