engleski

Comparison of DC, RF, and Dispersion Properties of SOI and Strained-SOI N-MOSFETs

The operating performance of SOI and strained- SOI N-MOSFETs are compared. In particular, these properties are examined in detail: 1) electron mobility and DC characteristics, 2) high frequency behavior, 3) dispersion and self-heating effects, and 4) buried oxide interface trap density. Our results demonstrate that SSOI technology can improve ft and fmax conservatively by up to 50% without excessive dispersion/self-heating. Furthermore, measurements indicate that the SSOI wafer bonding process can produce an acceptable buried oxide interface trap density.

strained-silicon; silicon on insulator; RF characterization; self-heating effect

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