engleski

Scaling of the Exclusion/Extraction InSb MOSFETs

A methodology for simulation of InSb MOSFETs in standard drift-diffusion simulators is presented. Due to its low bandgap and high mobility, InSb shows promise as a material for THz active devices operating at very low voltages. Non-parabolicity, degeneracy, mobility and Auger recombination/generation are explained and modeled. Leakage current, transconductance and maximum unity current gain frequency of the exclusion/extraction MOSFET are examined and its scaling properties down to 0.150 m are analyzed.

InSb; MOSFET; scaling; drift-diffusion simulation

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