Investigation of scaling of InSb MOSFETs through drift-diffusion simulation (CROSBI ID 124051)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Sijerčić, Edin ; Pejčinović, Branimir
engleski
Investigation of scaling of InSb MOSFETs through drift-diffusion simulation
Models needed for drift– diffusion simulation of InSb MOSFETs in commercially available simulator are presented and applied to the problem of scaling of the exclusion/extraction InSb MOSFETs. Non-parabolicity, degeneracy, mobility and Auger recombination/generation are explained and modeled. Leakage current and maximum unity current gain frequency of the exclusion/extraction MOSFET are examined and its scaling properties down to 0.15 μ m are analyzed. Because of its high mobility and saturation velocity, InSb shows promise as a material for THz active devices operating at very low voltages, despite its low bandgap and resulting leakage currents.
InSb transistors; Auger recombination; Novel devices; Exclusion/extraction
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano