engleski

Comparison of Semiconductor Simulation Models on the Basis of Well-Tempered nMOSFETs

The downscaling of MOS transistors has already reached the nanometer scales, with channel lengths of few tens of nanometers. Due to higher order physical effects, the accuracy of classical numerical device simulation models ; Drift- Diffusion (DD) and Hydrodynamic (HD) is questionable for nanometer scale MOSFETs. Full Band Monte-Carlo (MC) Device Simulation can serve as a physical reference for accessing the HD, DD modeling accuracy by comparing the modeling results. In this paper, a comparison of three consistent simulation models (DD, HD, MC) is presented on the basis of well-tempered bulk-Si nMOSFETs structures.

MOSFET; short channel effect; device simulation model; drift-diffusion; hydrodynamic; Monte-Carlo

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