engleski

A GISAXS study of SiO/SiO2 superlattice

We present a structural analysis of Ge islands on Si(100) substrates using grazing-incidence small-angle X-ray scattering (GISAXS). GISAXS is a nondestructive and powerful technique for structural characterization of islands fabricated on a substrate. From the GISAXS pattern it is possible to determine the size, the shape, the inter-island distance and the size distribution of islands. In this work, the samples were prepared with high-vacuum evaporation of a 10nm thick Ge layer on Si(100) substrate heated at 200  C. The samples were annealed at 500 - 700 °C for 1h in vacuum, yielding to island formation. The implementation of such Ge islands into silicon solar cells is proposed.

silicon ; nanostructures ; SiO/SiO2 superlattice ; solar cells ; grazing incidence small angle X-ray scattering

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