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Low Pressure Chemical Vapor Deposition of Different Silicon Nanostructures

The low pressure chemical vapor deposition technique was used to deposit different silicon nanostructures by varying the working gas composition and substrate temperature. Silan gas diluted with argon was used to deposit silicon nanocrystals on different temperatures between 650 and 900 ^oC. The p-doping films of polystalline Si films were prepared by using BCl_3 vapor. The SiO_2 nanostructures were deposited by using the mixture of SiH_4+O_2 gasses and, in another case, of SiH_4+N_2O gasses. The structure and optical properties of such nanostructures were examined by Raman and IR spectroscopy, SEM analysis and electrical measurements.

LPCVD; sillicon nanocrystals; polysilicon; Raman spectroscopy; IR spectroscopy; SEM analysis

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